收藏本站
Polar TM Power MOSFET
HiPerFET TM
N-Channel Enhancement Mode
Avalanche Rated
IXFB40N110P
V DSS
I D25
R DS(on)
t rr
=
=
≤
≤
1100V
40A
260 m Ω
300 ns
Fast Intrinsic Diode
PLUS264 TM (IXFB)
Symbol
Test Conditions
Maximum Ratings
V DSS
V DGR
V GSS
T J = 25 ° C to 150 ° C
T J = 25 ° C to 150 ° C, R GS = 1M Ω
Continuous
1100
1100
± 30
V
V
V
G
D
S
(TAB)
V GSM
I D25
I DM
Transient
T C = 25 ° C
T C = 25 ° C, pulse width limited by T JM
± 40
40
100
V
A
A
G = Gate
S = Source
D = Drain
TAB = Drain
I AR
E AS
dV/dt
P D
T J
T JM
T stg
T L
T SOLD
F C
Weight
T C = 25 ° C
T C = 25 ° C
I S ≤ I DM , V DD ≤ V DSS , T J ≤ 150 ° C
T C = 25 ° C
1.6mm (0.062 in.) from case for 10s
Plastic body for 10s
Mounting force
20
2
15
1250
-55 ... +150
150
-55 ... +150
300
260
30..120/6.7..27
10
A
J
V/ns
W
° C
° C
° C
° C
° C
N/lb.
g
Features
Fast recovery diode
Unclamped Inductive Switching (UIS)
rated
Low package inductance
- easy to drive and to protect
Advantages
Plus 264 TM package for clip or spring
mounting
Space savings
High power density
Applications:
High Voltage Switched-mode and
Symbol Test Conditions
(T J = 25 ° C, unless otherwise specified)
Characteristic Values
Min. Typ. Max.
resonant-mode power supplies
High Voltage Pulse Power Applications
High Voltage Discharge circuits in
BV DSS
V GS = 0V, I D = 3mA
1100
V
Lasers Pulsers, Spark Igniters, RF
Generators
V GS(th)
I GSS
I DSS
V DS = V GS , I D = 1mA
V GS = ± 30V, V DS = 0V
V DS = V DSS
V GS = 0V
T J = 125 ° C
3.5
6.5
± 200
50
3
V
nA
μ A
mA
High Voltage DC-DC converters
High Voltage DC-AC inverters
R DS(on)
V GS = 10V, I D = 0.5 ? I D25 , Note 1
260
m Ω
? 2008 IXYS CORPORATION, All rights reserved
DS99849B(03/08)
发布紧急采购，3分钟左右您将得到回复。

采购需求

(若只采购一条型号，填写一行即可)

发布成功！您可以继续发布采购。也可以进入我的后台，查看报价

发布成功！您可以继续发布采购。也可以进入我的后台，查看报价

*型号 *数量 厂商 批号 封装
添加更多采购

我的联系方式

*
*
*
相关PDF资料
IXFB44N100P MOSFET N-CH 1000V 44A PLUS264
IXFB44N100Q3 MOSFET N-CH 1000V 44A PLUS264
IXFB50N80Q2 MOSFET N-CH 800V 50A PLUS264
IXFB52N90P MOSFET N-CH TO-264
IXFB60N80P MOSFET N-CH 800V 60A PLUS264
IXFB62N80Q3 MOSFET N-CH 800V 62A PLUS264
IXFB70N60Q2 MOSFET N-CH 600V 70A PLUS264
IXFB72N55Q2 MOSFET N-CH 550V 72A PLUS264
相关代理商/技术参数
IXFB44N100P 功能描述:MOSFET 44 Amps 1000V 0.22 Rds RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
IXFB44N100Q3 功能描述:MOSFET Q3Class HiPerFET Pwr MOSFET 1000V/44A RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
IXFB50N80Q2 功能描述:MOSFET 50 Amps 800V RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
IXFB52N90P 功能描述:MOSFET PolarHV HiPerFETs 500V-1.2Kv Red Rds RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
IXFB60N80P 功能描述:MOSFET 60 Amps 800V 0.14 Rds RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
IXFB62N80Q3 功能描述:MOSFET Q3Class HiPerFET Pwr MOSFET 800V/62A RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
IXFB70N60Q2 功能描述:MOSFET 70 Amps 600V RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
IXFB72N55Q2 功能描述:MOSFET 72 Amps 550V 0.07 Rds RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube